Silicon nitride ceramics (Si₃N₄) have important applications in semiconductor manufacturing and packaging due to their unique physical and chemical properties, mainly reflected in the following aspects:
 

Silicon nitride ceramic parts produced by Mingrui Ceramics

1. Key components of semiconductor manufacturing equipment
 

High temperature resistance and corrosion resistance:

Processes such as etching and chemical vapor deposition (CVD) in semiconductor manufacturing need to be exposed to high temperatures (up to 1000°C) and highly corrosive gases (such as Cl₂, CF₄, HBr, etc.). The high temperature stability (melting point of about 1900°C) and corrosion resistance of silicon nitride ceramics make it an ideal material for core components such as reaction chambers, gas nozzles, heaters, etc.

Low thermal expansion coefficient:

The thermal expansion coefficient is close to that of silicon wafers, which can reduce thermal stress in high temperature processes and avoid wafer deformation or cracking.

Application examples:

Electrostatic chuck (ESC) substrate of etching machine.

Susceptor of CVD equipment.

Support structure in high temperature furnace tube.

2. Precision components in lithography technology
 

High rigidity and low thermal deformation:

The mask (Reticle) bracket and motion platform of the lithography machine need to work stably at nanometer precision. Silicon nitride's high rigidity (elastic modulus ~300 GPa) and low thermal expansion coefficient (~3.2×10⁻⁶/K) can reduce errors caused by vibration and temperature fluctuations.

Radiation resistance:

In extreme ultraviolet lithography (EUV), silicon nitride has better tolerance to high-energy radiation than metal materials.

3. Wafer processing and transfer
 

Robot arm and vacuum chuck:

Silicon nitride's high wear resistance and insulation make it suitable for the contact parts of the wafer transfer robot (Robot Arm) and the surface material of the vacuum chuck to avoid contaminating the wafer.

Grinding pad and polishing plate:

In chemical mechanical polishing (CMP), the hardness and chemical inertness of silicon nitride can improve polishing uniformity.

4. Packaging and substrate materials
 

High thermal conductivity and insulation:

The thermal conductivity of silicon nitride ceramics (~30 W/m·K) is significantly higher than that of aluminum oxide (Al₂O₃), while maintaining high insulation, making it suitable as a heat dissipation substrate for power devices (such as IGBT, SiC/GaN modules).

Low dielectric loss:

In high-frequency device packaging, the low dielectric constant (~8.5) and low loss factor of silicon nitride can reduce signal delay.

Application examples:

Insulating substrates for power modules in electric vehicles (replacing AlN or Al₂O₃).

Thermal management materials for LED packaging.

5. Consumables for thin film deposition processes
 

Targets and components in PVD/CVD processes:

Silicon nitride films are often used in the passivation layer of semiconductor devices. The ceramic targets used in their deposition process need to be high-purity and resistant to plasma erosion. Silicon nitride targets and reaction chamber components can meet this demand.

6. Emerging Applications: Third Generation Semiconductor Manufacturing
 

Silicon Carbide (SiC) Epitaxial Growth:

High-temperature epitaxial growth of SiC wafers (>1500°C) requires the use of silicon nitride coated graphite trays to prevent SiC from reacting with graphite.

The application of silicon nitride ceramics in the semiconductor field reflects its core value as an "industrial tooth", and will further replace traditional materials in advanced processes and third-generation semiconductor technologies in the future.